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  ? semiconductor components industries, llc, 2012 january , 2012 ? rev . 4 1 publication order number: Z0103MA/d Z0103MA sensitive gate t riacs series silicon bidirectional thyristors designed for use in solid state relays, mpu interface, ttl logic a n d any other light industrial or consumer application. supplied in an inexpensive t o ? 92 package which is readily adaptable for use in automatic insertion equipment. features ? one ? piece, injection ? molded package ? blocking v oltage to 600 v ? sensitive gate t riggering in four t rigger modes (quadrants) for all possible combinations of t rigger sources, and especially for circuits that source gate drives ? all dif fused and glassivated junctions for maximum uniformity of parameters and reliability ? improved noise immunity (dv/dt minimum of 10 v/  sec at 1 1 0 c) ? commutating di/dt of 1.6 a/msec at 1 1 0 c ? high sur ge current of 8 a ? these are pb ? free devices maximum ra tings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive of f-state v oltage (t j = ? 40 to +125 c) (1) sine wave 50 to 60 hz, gate open v drm, v rrm 600 v on-state rms current full cycle sine wave 50 to 60 hz (t c = 50 c) i t(rms) 1.0 a peak non ? repetitive surge current one full cycle, sine wave 60 hz (t c = 110 c) i tsm 8.0 a circuit fusing considerations (t = 8.3 ms) i 2 t 0.35 a 2 s average gate power (t c = 80 c, t  8.3 ms) p g(av) 1.0 w peak gate current (t  20  s, t j = +125 c) i gm 1.0 a operating junction temperature range t j ? 40 to +125 c storage temperature range t stg ? 40 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only . functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability . 1. v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. triacs 1.0 ampere rms 600 vol ts http://onsemi.com see detailed ordering and shipping information in the package dimensions section on p age 6 of this data sheet. ordering informa tion mt1 g mt2 to ? 92 (to ? 226aa) case 029 style 12 pin assignment 1 2 3 gate main terminal 2 main t erminal 1 1 2 3 1 2 bent lead tape & reel ammo pack straight lead bulk p ack 3 12 3 z0 10xma yww   marking diagram x = 3,7,9 y = y ear ww = w ork w eek  = pb ? free package (*note: microdot may be in either location) http://
Z0103MA http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r  jc 50 c/w thermal resistance, junction ? to ? ambient r  ja 160 c/w maximum lead temperature for soldering purposes for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current t j = 25 c (v d = rated v drm , v rrm ; gate open) t j = +125 c i drm , i rrm ? ? ? ? 5.0 500  a on characteristics peak on ? state v oltage (i tm =  1.4 a peak; pulse width  2.0 ms, duty cycle  2.0%) v tm ? ? 1.56 v gate t r i gger current (continuous dc) (v d = 12 vdc, r l = 30  ) mt2(+), g(+) mt2(+), g( ? ) mt2( ? ), g( ? ) mt2( ? ), g(+) i gt 0.15 0.15 0.15 0.25 ? ? ? ? 3.0 3.0 3.0 5.0 ma latching current (v d = 12 v , i g = 1.2 x i gt ) mt2(+), g(+) all t ypes mt2(+), g( ? ) all t ypes mt2( ? ), g( ? ) all t ypes mt2( ? ), g(+) all types i l ? ? ? ? ? ? ? ? 7.0 15 7.0 7.0 ma gate t rigger v oltage (continuous dc) (v d = 12 vdc, r l = 30  ) mt2(+), g(+) all t ypes mt2(+), g( ? ) all t ypes mt2( ? ), g( ? ) all t ypes mt2( ? ), g(+) all types v gt ? ? ? ? ? ? ? ? 1.3 1.3 1.3 1.3 v gate non ? t rigger v oltage (v d = 12 v , r l = 30  , t j = 125 c) all four quadrants v gd 0.2 ? 1.3 v holding c u r r e n t (v d = 12 vdc, initiating current = 50 ma, gate open) i h ? ? 7.0 ma dynamic characteristics rate of change of commutating current (v d = 400 v , i tm = 0.84 a, commutating dv/dt = 1.5 v/  s, gate open, t j = 110 c, f = 250 hz, with snubber) di/dt(c) 1.6 ? ? a/ms critical rate of rise of of f ? state v oltage (v d = 67% rated v drm , exponential waveform, gate open, t j = 110 c) dv/dt 10 30 ? v/  s repetitive critical rate of rise of on ? state current, t j = 125 c pulse width = 20  s, ipk max = 15 a, dig/dt = 1 a/  s, f = 60 hz di/dt ? ? 20 a/  s
Z0103MA http://onsemi.com 3 + current + voltage v tm i h symbol parameter voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 maint erminal 2 + quadrant 3 maint erminal 2 ? v tm i h v tm maximum on state v oltage i h holding current i rrm peak reverse blocking current v rrm peak repetitive reverse of f state v oltage i drm peak forward blocking current v drm peak repetitive forward of f state v oltage mt1 (+) i gt ga te (+) mt2 ref mt1 ( ? ) i gt ga te (+) mt2 ref mt1 (+) i gt ga te ( ? ) mt2 ref mt1 ( ? ) i gt ga te ( ? ) mt2 ref ? mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a t riac i gt ? + i gt all polarities are referenced to mt1. with in ? phase signals (using standard ac lines) quadrants i and iii are used.
Z0103MA http://onsemi.com 4    = conduction angle 0.5 0.6 0.7 0.8 0.1 0.2 0.3 0.4 0 11 0 100 90 80 70 60 i t(rms) , rms on-st a t e current (amps) t , maximum allow able case tempera ture ( c) c  = 30 60 90 dc 180 120 50 40 30 figure 1. rms current derating figure 2. rms current derating    = conduction angle 0.25 0.3 0.35 0.4 0.05 0.1 0.15 0.2 0 90 80 70 60 50 40 i t(rms) , rms on-st a te current (amps) 30 20 100 11 0  = 30 60 90 dc 180 120 , maximum allowable ambient temperature ( c) t(rms) i figure 3. power dissipation 0.4 0.5 0.6 0.7 0 0.1 0.2 0.3 0.6 0.4 0.2 0 i t(rms) , rms on-st a te current (amps) 0.8    = conduction angle 0.8 1.0 1.2 p , maximum a verage power dissip a tion (w a tts) (a v)  = 30 60 90 dc 180 120 0.006 0.01 0.02 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 t j = 110 c 25 c i tm , instantaneous on\state current (amp) 0.4 1.2 2.0 2.8 3.6 4.4 5.2 6.0 v tm , instantaneous on\state voltage (volts) figure 4. on ? state characteristics
Z0103MA http://onsemi.com 5 figure 5. t ransient thermal response figure 6. maximum allowable surge current 0.1 1.0 10 100 1. 0 t, time (  s) 0.1 0.01 1 ? 10 3 1 ? 10 4 3.0 30 50 1.0 2.0 100 3.0 2.0 1.0 number of cycles 5.0 10 z  jc(t) = r  jc(t)  r(t) 10 5.0 surge is preceded and followed by rated current. t j = 1 1 0 c f = 60 hz cycle i , peak surge current (amps) tsm r , transient thermal resistance (normalized) (t) figure 7. t ypical gate t rigger current versus junction t emperature figure 8. typical gate trigger voltage versus junction temperature figure 9. t ypical latching current versus junction t emperature figure 10. t ypical holding current versus junction t emperature 100 10 1 0 t j , junction tempera ture ( c) 1.2 0.4 t j , junction tempera ture ( c) 0.3 t j , junction tempera ture ( c) 1 t j , junction tempera ture ( c) 0.1 35 50 80 -40 -25 5 20 95 1 10 20 35 80 -40 -25 -10 5 95 1 10 10 , ga te trigger current (ma) gt , ga te trigger vol t age (v) gt , la tching current (ma) l -10 65 i q4 q3 q2 q1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v 50 65 q4 q3 q2 q1 i 100 10 1 0 35 50 80 -40 -25 5 20 95 1 10 -10 65 q4 q3 q2 q1 35 50 80 -40 -25 5 20 95 1 10 -10 65 , holding current (ma) h i mt2 negative mt2 positive
Z0103MA http://onsemi.com 6 figure 1 1. simplified t est circuit to measure the critical rate of rise of commutating current (di/dt) c l l 1n4007 200 v + measure i - charge control charge trigger non\polar c l 51  mt2 mt1 1n914 g trigger control 200 v rms adjust for i tm , 60 hz v ac note: component values are for verification of rated (di/dt) c . see an1048 for additional information. r s adjust for di/dt (c) c s ordering & shipping informa tion: packaging options, device suffix u.s. europe equivalent shipping ? description of to ? 92 tape orientation Z0103MArl1g radial tape and reel (2k/reel) flat side of to ? 92 and adhesive tape visible Z0103MAg bulk in box (5k/box) n/a, bulk Z0103MArlrpg radial tape and fan fold box (2k/box) round side of to ? 92 and adhesive tape visible Z0103MArlrfg radial tape and fan fold box (2k/box) round side of to ? 92 and adhesive tape on re- verse side ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
Z0103MA http://onsemi.com 7 p ackage dimensions to ? 92 (t o ? 226aa) case 029 ? 11 issue am style 12: pin 1. main terminal 1 2. ga te 3. main terminal 2 notes: 1. dimensioning and t olerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. cont our of p ackage beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x ? x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.1 15 --- 2.93 --- v 0.135 --- 3.43 --- 1 notes: 1. dimensioning and t olerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. cont our of p ackage beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j b k g section x ? x c v d n xx seating plane dim min max millimeters a 4.45 5.20 b 4.32 5.33 c 3.18 4.19 d 0.40 0.54 g 2.40 2.80 j 0.39 0.50 k 12.70 --- n 2.04 2.66 p 1.50 4.00 r 2.93 --- v 3.43 --- 1 t straight lead bulk p ack bent lead t ape & reel ammo p ack on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice t o any products herein. scillc makes no warranty , representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including wi thout limitation special, consequential or incidental damages. ?t ypical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in dif ferent application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer ?s technical experts. scillc does not convey any license under its patent rights n o r the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur . should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publica tion ordering informa tion n. american t echnical support : 800 ? 282 ? 9855 t oll free usa/canada europe, middle east and africa t echnical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 Z0103MA/d litera ture fulfillment : literature distribution center for on semiconductor p .o. box 5163, denver , colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 t oll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 t oll free usa/canada email : orderlit@onsemi.com on semiconductor w ebsite : www .onsemi.com order literature : http://www .onsemi.com/orderlit for additional information, please contact your local sales representative


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